| Alternative NSN: 5961-00-082-4073 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 000824073 |
| NCB Code: USA (00) |
| Manufacturers: Adelco Elektronik Gmbh, Cetec Corp, Diodes Inc, E C A Etablissement Central, Electronic Devices Inc, Electronic Industries Inc, Epcos Inc, Inspektorat Wsparcia Sil Zbrojnych, Microsemi Corp, Raytheon Company, Thales Usa Inc |
Browse NSN parts of NSN 5961-00-082-4073 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5961-00-082-4073 like 1N4249, 1N4249, 3159268, 4178600-443, 5961000824073 described as Semiconductor Device Diode from industry leading manufactures such as Electronic Industries Inc, Microsemi Corp, Cetec Corp, Raytheon Company, E C A Etablissement Central. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1N4249 | Electronic Industries Inc | semiconductor device diode | Avl | RFQ |
| 1N4249 | Microsemi Corp | semiconductor device diode | Avl | RFQ |
| 3159268 | Cetec Corp | semiconductor device diode | Avl | RFQ |
| 4178600-443 | Raytheon Company | semiconductor device diode | Avl | RFQ |
| 5961000824073 | E C A Etablissement Central | semiconductor device diode | Avl | RFQ |
| 5961PL1332328 | Inspektorat Wsparcia Sil Zbrojnych | semiconductor device diode | Avl | RFQ |
| 617976-1 | Raytheon Company | semiconductor device diode | Avl | RFQ |
| 848101-0001 | Thales Usa Inc | semiconductor device diode | Avl | RFQ |
| EC100 | Electronic Devices Inc | semiconductor device diode | Avl | RFQ |
| JAN1N4249A | Adelco Elektronik Gmbh | semiconductor device diode | Avl | RFQ |
| Q68000-A3379-Z | Epcos Inc | semiconductor device diode | Avl | RFQ |
| TS10 | Diodes Inc | semiconductor device diode | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.080 INCHES MINIMUM AND 0.150 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 333.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS MEGAHERTZ |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
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5905-00-001-2971 (5905000012971) |
5905-00-001-3031 (5905000013031) |
5905-00-001-3050 (5905000013050) |
|
5905-00-001-3085 (5905000013085) |
5905-00-001-3197 (5905000013197) |
5905-00-001-3806 (5905000013806) |
|
5905-00-001-3819 (5905000013819) |
5905-00-001-3821 (5905000013821) |
5905-00-001-3822 (5905000013822) |
|
5905-00-001-3824 (5905000013824) |
5905-00-001-3825 (5905000013825) |
5905-00-001-3827 (5905000013827) |
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