NSN 5961-00-529-2685 (5961005292685) Listing

Alternative NSN: 5961-00-529-2685

Item Name: Semiconductor Device Diode

FSG: 59 Electrical and Electronic Equipment Components

Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware

NCB Code: USA (00)

Manufacturers: Adelco Elektronik Gmbh, Alcatel Lucent Norway As, Bae Systems Information And Electronic Systems Integration I, Electronic Industries Inc, Fairchild Semiconductor Corporation, Freescale Semiconductor Inc, Harsco Corporation, Hewlett Packard Company, Honeywell International Inc, Joint Electron Device Engineering, Lacon Electronic Gmbh, Raytheon Company, Telcom Semiconductor Inc

Browse NSN parts of NSN 5961-00-529-2685 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5961-00-529-2685 like 12043-0117, 185-0065, 1902-0041, 1N5231C, 1N751 described as Semiconductor Device Diode from industry leading manufactures such as Honeywell International Inc, Harsco Corporation, Hewlett Packard Company, Fairchild Semiconductor Corporation, Joint Electron Device Engineering. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.

Part Number's List for NSN 5961-00-529-2685, 5961005292685

Part No	Manufacturer	Item Name	QTY	RFQ
12043-0117	Honeywell International Inc	semiconductor device diode	Avl	RFQ
185-0065	Harsco Corporation	semiconductor device diode	Avl	RFQ
1902-0041	Hewlett Packard Company	semiconductor device diode	Avl	RFQ
1N5231C	Fairchild Semiconductor Corporation	semiconductor device diode	Avl	RFQ
1N751	Joint Electron Device Engineering	semiconductor device diode	Avl	RFQ
1N7518	Electronic Industries Inc	semiconductor device diode	Avl	RFQ
1N751A	Bae Systems Information And Electronic Systems Integration I	semiconductor device diode	Avl	RFQ
1N751A	Harsco Corporation	semiconductor device diode	Avl	RFQ
1N751B	Lacon Electronic Gmbh	semiconductor device diode	Avl	RFQ
1N751B	Telcom Semiconductor Inc	semiconductor device diode	Avl	RFQ
1N751B	Freescale Semiconductor Inc	semiconductor device diode	Avl	RFQ
1N751B	Electronic Industries Inc	semiconductor device diode	Avl	RFQ
1N751B	Adelco Elektronik Gmbh	semiconductor device diode	Avl	RFQ
1N751BA	Adelco Elektronik Gmbh	semiconductor device diode	Avl	RFQ
2088809-0072	Honeywell International Inc	semiconductor device diode	Avl	RFQ
2088809-72	Honeywell International Inc	semiconductor device diode	Avl	RFQ
712 ITT 04020 SAAT	Alcatel Lucent Norway As	semiconductor device diode	Avl	RFQ
F00001-50	Raytheon Company	semiconductor device diode	Avl	RFQ

Product Specification of NSN 5961005292685

MRC	Criteria	Characteristic
ABBH	INCLOSURE MATERIAL	GLASS
ABHP	OVERALL LENGTH	0.300 INCHES MAXIMUM
ABJT	TERMINAL LENGTH	1.000 INCHES NOMINAL
ADAV	OVERALL DIAMETER	0.115 INCHES MAXIMUM
AXGY	MOUNTING METHOD	TERMINAL
CBBL	FEATURES PROVIDED	HERMETICALLY SEALED CASE
CTMZ	SEMICONDUCTOR MATERIAL	SILICON
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
CTQX	CURRENT RATING PER CHARACTERISTIC	20.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC
CTRD	POWER RATING PER CHARACTERISTIC	400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
CTSG	MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 DEG CELSIUS AMBIENT AIR
TTQY	TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

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