NSN 5961-00-626-1808 (5961006261808) Listing

Alternative NSN: 5961-00-626-1808

Item Name: Semiconductor Device Diode

FSG: 59 Electrical and Electronic Equipment Components

Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware

NCB Code: USA (00)

Manufacturers: Avago Technologies U S Inc, British Aerospace Inc, Cobham Electronic Systems Inc, E2v Semiconductors, Hensoldt Sensors Gmbh Div Seps, Hewlett Packard Company, Paaesikunta Logistiikkaosasto, Racal Communications Systems Ltd, Selex Es Limited, Semi General Inc, Target Corporation, Thales Communications, Thales Optronique Sas, Thales Sa, Thales Systemes Aeroportes S A, Thales Uk Limited, Thales Usa Inc

Browse NSN parts of NSN 5961-00-626-1808 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5961-00-626-1808 like 01416462, 10070656, 246242-0001, 3077, 3511 013 72731 described as Semiconductor Device Diode from industry leading manufactures such as Thales Systemes Aeroportes S A, Paaesikunta Logistiikkaosasto, Thales Usa Inc, Hewlett Packard Company, Thales Optronique Sas. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.

Part Number's List for NSN 5961-00-626-1808, 5961006261808

Part No	Manufacturer	Item Name	QTY	RFQ
01416462	Thales Systemes Aeroportes S A	semiconductor device diode	Avl	RFQ
10070656	Paaesikunta Logistiikkaosasto	semiconductor device diode	Avl	RFQ
246242-0001	Thales Usa Inc	semiconductor device diode	Avl	RFQ
3077	Hewlett Packard Company	semiconductor device diode	Avl	RFQ
3511 013 72731	Thales Optronique Sas	semiconductor device diode	Avl	RFQ
404123	Target Corporation	semiconductor device diode	Avl	RFQ
415 4 05660	British Aerospace Inc	semiconductor device diode	Avl	RFQ
415 4 05660	Selex Es Limited	semiconductor device diode	Avl	RFQ
486311	Thales Communications	semiconductor device diode	Avl	RFQ
5082-3077	Avago Technologies U S Inc	semiconductor device diode	Avl	RFQ
5082-3077	Hewlett Packard Company	semiconductor device diode	Avl	RFQ
5L.5534.001.36	Hensoldt Sensors Gmbh Div Seps	semiconductor device diode	Avl	RFQ
935588	Thales Uk Limited	semiconductor device diode	Avl	RFQ
935588	Racal Communications Systems Ltd	semiconductor device diode	Avl	RFQ
99114753	Thales Sa	semiconductor device diode	Avl	RFQ
DH403B	E2v Semiconductors	semiconductor device diode	Avl	RFQ
HP5082-3077	Hewlett Packard Company	semiconductor device diode	Avl	RFQ
HP5082-3077	Avago Technologies U S Inc	semiconductor device diode	Avl	RFQ
MA47066	Cobham Electronic Systems Inc	semiconductor device diode	Avl	RFQ
UX5082-3077	Semi General Inc	semiconductor device diode	Avl	RFQ

Product Specification of NSN 5961006261808

MRC	Criteria	Characteristic
ABBH	INCLOSURE MATERIAL	GLASS
ABHP	OVERALL LENGTH	0.170 INCHES MAXIMUM
ABJT	TERMINAL LENGTH	1.000 INCHES MINIMUM
ADAV	OVERALL DIAMETER	0.076 INCHES MAXIMUM
AXGY	MOUNTING METHOD	TERMINAL
CBBL	FEATURES PROVIDED	HERMETICALLY SEALED CASE
CTMZ	SEMICONDUCTOR MATERIAL	SILICON
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	200.0 MAXIMUM BREAKDOWN VOLTAGE, DC
CTRD	POWER RATING PER CHARACTERISTIC	250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
CTSG	MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 DEG CELSIUS AMBIENT AIR
TTQY	TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

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