NSN 5961-00-836-8519 (5961008368519) Listing

Alternative NSN: 5961-00-836-8519
Item Name: Transistor
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NIIN: 008368519
NCB Code: USA (00)
Manufacturers: Bendix Corp, Boeing Company The, Dla Land And Maritime, Fairchild Semiconductor Corporation, Raytheon Company, Raytheon Technical Services Company, Texas Instruments Incorporated

Browse NSN parts of NSN 5961-00-836-8519 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5961-00-836-8519 like 2327144-1, 472-0009-001, 472-0009-001, 701M, 701M described as Transistor from industry leading manufactures such as Bendix Corp, Boeing Company The, Fairchild Semiconductor Corporation, Texas Instruments Incorporated, Raytheon Technical Services Company. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.

Part Number's List for NSN 5961-00-836-8519, 5961008368519

Part No Manufacturer Item Name QTY RFQ
2327144-1 Bendix Corp transistor Avl RFQ
472-0009-001 Boeing Company The transistor Avl RFQ
472-0009-001 Fairchild Semiconductor Corporation transistor Avl RFQ
701M Texas Instruments Incorporated transistor Avl RFQ
701M Raytheon Technical Services Company transistor Avl RFQ
701M Raytheon Company transistor Avl RFQ
701M Fairchild Semiconductor Corporation transistor Avl RFQ
DMS 76001B Dla Land And Maritime transistor Avl RFQ

Product Specification of NSN 5961008368519

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH0.260 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.500 INCHES MINIMUM
ADAVOVERALL DIAMETER0.370 INCHES MAXIMUM
ALASINTERNAL CONFIGURATIONJUNCTION CONTACT
AXGYMOUNTING METHODTERMINAL
AYQSTERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CRTLCRITICALITY CODE JUSTIFICATIONFEAT
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER
CTRDPOWER RATING PER CHARACTERISTIC600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
FEATSPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN; NUCLEAR HARDNESS ITEM
PMLCIII PRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACE GOLD
PRMTIII PRECIOUS MATERIALGOLD
TTQYTERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
CTQXCURRENT RATING PER CHARACTERISTIC600.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
NHCFNUCLEAR HARDNESS CRITICAL FEATUREHARDENED

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