NSN 5961-00-883-8906 (5961008838906) Listing

Browse NSN parts of NSN 5961-00-883-8906 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5961-00-883-8906 like 04938, 04938, 1N3016B, 1N3016B, 1N9578 described as Semiconductor Device Diode from industry leading manufactures such as Basler Electric Company, Electronic Industries Inc, Ward Leonard Electric Company Inc, General Motors Corp, E2v Semiconductors. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.

Part Number's List for NSN 5961-00-883-8906, 5961008838906

Part No Manufacturer Item Name QTY RFQ
04938 Basler Electric Company semiconductor device diode Avl RFQ
04938 Electronic Industries Inc semiconductor device diode Avl RFQ
1N3016B Ward Leonard Electric Company Inc semiconductor device diode Avl RFQ
1N3016B General Motors Corp semiconductor device diode Avl RFQ
1N9578 E2v Semiconductors semiconductor device diode Avl RFQ
3191924 General Motors Corp semiconductor device diode Avl RFQ
352250010077 Thales Nederland B V semiconductor device diode Avl RFQ
353-3046-000 Rockwell Collins Inc semiconductor device diode Avl RFQ
353-3121-000 Rockwell Collins Inc semiconductor device diode Avl RFQ
40-666-3498-01U Ge Aviation Systems Llc semiconductor device diode Avl RFQ
4178600-83 Raytheon Company semiconductor device diode Avl RFQ
5961PL1385065 Inspektorat Wsparcia Sil Zbrojnych semiconductor device diode Avl RFQ
848117-0001 Thales Usa Inc semiconductor device diode Avl RFQ
883386 Nai Technologies Inc semiconductor device diode Avl RFQ
A15768-1 Ge Aviation Systems Llc semiconductor device diode Avl RFQ
D17259-3 Bogue Electric Manufacturing Co semiconductor device diode Avl RFQ
JAN1N3016B Texas Instruments Incorporated semiconductor device diode Avl RFQ
JAN1N3016BA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ
JHP111-131 Hollingsworth John R Co semiconductor device diode Avl RFQ
MZ6-8V01 International Rectifier Corporation semiconductor device diode Avl RFQ
RZ6-8 Alcatel Lucent France semiconductor device diode Avl RFQ
VBE890-1N3016B Thales Nederland B V semiconductor device diode Avl RFQ

Product Specification of NSN 5961008838906

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS
ABHPOVERALL LENGTH0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM
ADAVOVERALL DIAMETER0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
ALBAELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASECATHODE
AXGYMOUNTING METHODTERMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
CTQSVOLTAGE TOLERANCE IN PERCENT-5.0/+5.0
CTQXCURRENT RATING PER CHARACTERISTIC37.00 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC AND 140.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL
CTRDPOWER RATING PER CHARACTERISTIC1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR
TESTTEST DATA DOCUMENT81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD

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