NSN 5961-01-008-8910 (5961010088910) Listing

Alternative NSN: 5961-01-008-8910
Item Name: Semiconductor Device Diode
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NIIN: 010088910
NCB Code: USA (01)
Manufacturers: Avago Technologies U S Inc, Cobham Electronic Systems Inc, Harris Corporation, Hewlett Packard Company, Paaesikunta Logistiikkaosasto, Rockwell Collins Inc, Thales Sa

Browse NSN parts of NSN 5961-01-008-8910 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5961-01-008-8910 like 10133127, 353-3733-010, 4P3500, 5082-3168, 5082-3168 described as Semiconductor Device Diode from industry leading manufactures such as Paaesikunta Logistiikkaosasto, Rockwell Collins Inc, Cobham Electronic Systems Inc, Avago Technologies U S Inc, Hewlett Packard Company. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.

Part Number's List for NSN 5961-01-008-8910, 5961010088910

Part No Manufacturer Item Name QTY RFQ
10133127 Paaesikunta Logistiikkaosasto semiconductor device diode Avl RFQ
353-3733-010 Rockwell Collins Inc semiconductor device diode Avl RFQ
4P3500 Cobham Electronic Systems Inc semiconductor device diode Avl RFQ
5082-3168 Avago Technologies U S Inc semiconductor device diode Avl RFQ
5082-3168 Hewlett Packard Company semiconductor device diode Avl RFQ
91462176 Thales Sa semiconductor device diode Avl RFQ
D10-3500-000 Harris Corporation semiconductor device diode Avl RFQ
HP5082-3168 Hewlett Packard Company semiconductor device diode Avl RFQ

Product Specification of NSN 5961010088910

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS
ABHPOVERALL LENGTH0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM
ADAVOVERALL DIAMETER0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
AXGYMOUNTING METHODTERMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
CTRDPOWER RATING PER CHARACTERISTIC250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS JUNCTION
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD

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