| Alternative NSN: 5961-01-088-8346 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010888346 |
| NCB Code: USA (01) |
| Manufacturers: Astronics Test Systems Inc, Bae Systems Information And Electronic Systems Integration I, Champion Aviation Inc, E And R Electronics Inc, Electronic Industries Inc, Espey Mfg And Electronics Corp, Fairchild Semiconductor Corporation, Freescale Semiconductor Inc, General Semiconductor Inc, Gilbert Engineering Company, Hamilton Sundstrand Corporation, International Diode Corp, International Rectifier Corporation, Interstate Electronics Corporation, Micro Uspd Inc, Microsemi Corp, Power Mate Co, Raytheon Company, Raytheon Technical Services Company, Semitronics Corp, Solitron Devices Inc, Telcom Semiconductor Inc, Texas Instruments Incorporated |
Browse NSN parts of NSN 5961-01-088-8346 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5961-01-088-8346 like RELEASE2959, MIS-19836 64, E-233, DR017000, CD32123 described as Semiconductor Device Diode from industry leading manufactures such as Electronic Industries Inc, Microsemi Corp, Texas Instruments Incorporated, Power Mate Co, Telcom Semiconductor Inc. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| RELEASE2959 | Electronic Industries Inc | semiconductor device diode | Avl | RFQ |
| MIS-19836 64 | Microsemi Corp | semiconductor device diode | Avl | RFQ |
| E-233 | Texas Instruments Incorporated | semiconductor device diode | Avl | RFQ |
| DR017000 | Power Mate Co | semiconductor device diode | Avl | RFQ |
| CD32123 | Telcom Semiconductor Inc | semiconductor device diode | Avl | RFQ |
| 619136-1 | Raytheon Company | semiconductor device diode | Avl | RFQ |
| 5E4820 51-1015 | Hamilton Sundstrand Corporation | semiconductor device diode | Avl | RFQ |
| 566573 | Raytheon Technical Services Company | semiconductor device diode | Avl | RFQ |
| 418715-63 | Raytheon Company | semiconductor device diode | Avl | RFQ |
| 2601-3100 | E And R Electronics Inc | semiconductor device diode | Avl | RFQ |
| 220034 | Astronics Test Systems Inc | semiconductor device diode | Avl | RFQ |
| 200441-126 | Bae Systems Information And Electronic Systems Integration I | semiconductor device diode | Avl | RFQ |
| 1N960B | Texas Instruments Incorporated | semiconductor device diode | Avl | RFQ |
| 1N960B | Solitron Devices Inc | semiconductor device diode | Avl | RFQ |
| 1N960B | Semitronics Corp | semiconductor device diode | Avl | RFQ |
| 1N960B | International Diode Corp | semiconductor device diode | Avl | RFQ |
| 1N960B | Champion Aviation Inc | semiconductor device diode | Avl | RFQ |
| 1N960B | Fairchild Semiconductor Corporation | semiconductor device diode | Avl | RFQ |
| 1N960B | Espey Mfg And Electronics Corp | semiconductor device diode | Avl | RFQ |
| 1N960B | Electronic Industries Inc | semiconductor device diode | Avl | RFQ |
| 1N960B | Gilbert Engineering Company | semiconductor device diode | Avl | RFQ |
| 1N960B | General Semiconductor Inc | semiconductor device diode | Avl | RFQ |
| 1N960B | Microsemi Corp | semiconductor device diode | Avl | RFQ |
| 1N960B | Micro Uspd Inc | semiconductor device diode | Avl | RFQ |
| 1N960B | Interstate Electronics Corporation | semiconductor device diode | Avl | RFQ |
| 1N960A | International Rectifier Corporation | semiconductor device diode | Avl | RFQ |
| 1N757D | Freescale Semiconductor Inc | semiconductor device diode | Avl | RFQ |
| 1N757A | Electronic Industries Inc | semiconductor device diode | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.1 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 45.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
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5905-00-001-2971 (5905000012971) |
5905-00-001-3031 (5905000013031) |
5905-00-001-3050 (5905000013050) |
|
5905-00-001-3085 (5905000013085) |
5905-00-001-3197 (5905000013197) |
5905-00-001-3806 (5905000013806) |
|
5905-00-001-3819 (5905000013819) |
5905-00-001-3821 (5905000013821) |
5905-00-001-3822 (5905000013822) |
|
5905-00-001-3824 (5905000013824) |
5905-00-001-3825 (5905000013825) |
5905-00-001-3827 (5905000013827) |
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