| Alternative NSN: 5962-01-056-6428 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010566428 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc, Bae Systems Information And Electronic Systems Integration Inc, National Semiconductor Corp, Raytheon Company, Raytheon Technical Services Company |
Browse NSN parts of NSN 5962-01-056-6428 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5962-01-056-6428 like 314103P2, 776185, 776185, 776185, AM29705DM-B described as Microcircuit Memory from industry leading manufactures such as Bae Systems Information And Electronic Systems Integration Inc, Advanced Micro Devices Inc, Raytheon Technical Services Company, Raytheon Company, National Semiconductor Corp. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 314103P2 | Bae Systems Information And Electronic Systems Integration Inc | microcircuit memory | Avl | RFQ |
| 776185 | Advanced Micro Devices Inc | microcircuit memory | Avl | RFQ |
| 776185 | Raytheon Technical Services Company | microcircuit memory | Avl | RFQ |
| 776185 | Raytheon Company | microcircuit memory | Avl | RFQ |
| AM29705DM-B | Advanced Micro Devices Inc | microcircuit memory | Avl | RFQ |
| IDM29705JM 883 | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC15 00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 15 00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TEST | TEST DATA DOCUMENT49956-776185 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
| MEMORY | ADAQ | BODY LENGTH1 380 INCHES MINIMUM AND 1 430 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 580 INCHES MINIMUM AND 0 620 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 080 INCHES MINIMUM AND 0 120 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING973 5 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONRADAR SET TYPE ANFPS-115 |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND WENABLE AND WDECODED OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND METAL |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN18 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
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5905-00-001-2971 (5905000012971) |
5905-00-001-3031 (5905000013031) |
5905-00-001-3050 (5905000013050) |
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5905-00-001-3085 (5905000013085) |
5905-00-001-3197 (5905000013197) |
5905-00-001-3806 (5905000013806) |
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5905-00-001-3819 (5905000013819) |
5905-00-001-3821 (5905000013821) |
5905-00-001-3822 (5905000013822) |
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5905-00-001-3824 (5905000013824) |
5905-00-001-3825 (5905000013825) |
5905-00-001-3827 (5905000013827) |
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