NSN 5962-01-074-1670 (5962010741670) Listing

Alternative NSN: 5962-01-074-1670
Item Name: Microcircuit Linear
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 010741670
NCB Code: USA (01)
Manufacturers: Intersil Corporation, National Semiconductor Corp, Philips, Raytheon Company, Rohde And Schwarz Gmbh And Co Kg, Sapa Operaciones Sl

Browse NSN parts of NSN 5962-01-074-1670 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5962-01-074-1670 like 27030700190, 3009352, 808052-6, BO3009352, LF157A4 883B described as Microcircuit Linear from industry leading manufactures such as Sapa Operaciones Sl, Rohde And Schwarz Gmbh And Co Kg, Raytheon Company, National Semiconductor Corp, Intersil Corporation. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.

Part Number's List for NSN 5962-01-074-1670, 5962010741670

Part No Manufacturer Item Name QTY RFQ
27030700190 Sapa Operaciones Sl microcircuit linear Avl RFQ
3009352 Rohde And Schwarz Gmbh And Co Kg microcircuit linear Avl RFQ
808052-6 Raytheon Company microcircuit linear Avl RFQ
BO3009352 Rohde And Schwarz Gmbh And Co Kg microcircuit linear Avl RFQ
LF157A4 883B National Semiconductor Corp microcircuit linear Avl RFQ
LF157AH MIL National Semiconductor Corp microcircuit linear Avl RFQ
LF157H National Semiconductor Corp microcircuit linear Avl RFQ
LF157H Intersil Corporation microcircuit linear Avl RFQ
LF257H Philips microcircuit linear Avl RFQ
LF257H National Semiconductor Corp microcircuit linear Avl RFQ
LF357AH National Semiconductor Corp microcircuit linear Avl RFQ

Product Specification of NSN 5962010741670

MRCCriteriaCharacteristic
ADARBODY OUTSIDE DIAMETER0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
ADAUBODY HEIGHT0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING670.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDMONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED
CQSJINCLOSURE MATERIALGLASS AND METAL
CQSZINCLOSURE CONFIGURATIONCAN
CQZPINPUT CIRCUIT PATTERN2 INPUT
CSSLDESIGN FUNCTION AND QUANTITY1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
CTFTCASE OUTLINE SOURCE AND DESIGNATORT0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
CWSGTERMINAL SURFACE TREATMENTTIN

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