NSN 5962-01-109-2430 (5962011092430) Listing

Alternative NSN: 5962-01-109-2430

FSG: 59 Electrical and Electronic Equipment Components

Federal Supply Class (FSC): 5962 Microcircuits Electronic

NCB Code: USA (01)

Manufacturers: Advanced Micro Devices Inc, Bae Systems Information And Electronic Systems Integration I, Dla Land And Maritime, Edo Corp, Fairchild Semiconductor Corporation, General Dynamics Corporation, Litton Systems Inc, Philips Semiconductors Inc, Raytheon Company, Rockwell Collins Inc

Browse NSN parts of NSN 5962-01-109-2430 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5962-01-109-2430 like 202692-001, 507624-260, 838741-44, 85769300-03, 899867-1 described as Microcircuit Memory from industry leading manufactures such as Bae Systems Information And Electronic Systems Integration I, Edo Corp, Litton Systems Inc, General Dynamics Corporation, Raytheon Company. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.

Part Number's List for NSN 5962-01-109-2430, 5962011092430

Part No	Manufacturer	Item Name	QTY	RFQ
202692-001	Bae Systems Information And Electronic Systems Integration I	microcircuit memory	Avl	RFQ
507624-260	Edo Corp	microcircuit memory	Avl	RFQ
838741-44	Litton Systems Inc	microcircuitmemory	Avl	RFQ
85769300-03	General Dynamics Corporation	microcircuit memory	Avl	RFQ
899867-1	Raytheon Company	microcircuit memory	Avl	RFQ
93L425PC	Fairchild Semiconductor Corporation	microcircuit memory	Avl	RFQ
AM93L425DM-B	Advanced Micro Devices Inc	microcircuit memory	Avl	RFQ
DMS 90087B	Dla Land And Maritime	microcircuit memory	Avl	RFQ
HL42668	Fairchild Semiconductor Corporation	microcircuit memory	Avl	RFQ
PC73675-1	Rockwell Collins Inc	microcircuit memory	Avl	RFQ
PC73675-1	Philips Semiconductors Inc	microcircuit memory	Avl	RFQ

Product Specification of NSN 5962011092430

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 840 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING413 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND SCHOTTKY AND 3-STATE OUTPUT
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN13 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
MEMORY	ZZZK	SPECIFICATIONSTANDARD DATA81349-MIL-M-38510231 GOVERNMENT SPECIFICATION

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