| Alternative NSN: 5962-01-117-7026 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011177026 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc, Intel Corporation, Intersil Corporation, Msis Semiconductor Inc, National Semiconductor Corp, Rochester Electronics Llc |
Browse NSN parts of NSN 5962-01-117-7026 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5962-01-117-7026 like MM2102AJ 4 883, MD8102A-4 B, MC2102A-4, IM7552SEL, D8102A-4 described as Microcircuit Memory from industry leading manufactures such as National Semiconductor Corp, Intel Corporation, Intersil Corporation, Msis Semiconductor Inc, Advanced Micro Devices Inc. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| MM2102AJ 4 883 | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
| MD8102A-4 B | Intel Corporation | microcircuitmemory | Avl | RFQ |
| MC2102A-4 | Intel Corporation | microcircuit memory | Avl | RFQ |
| IM7552SEL | Intersil Corporation | microcircuit memory | Avl | RFQ |
| D8102A-4 | Intel Corporation | microcircuit memory | Avl | RFQ |
| CM2102A-4 | Intel Corporation | microcircuit memory | Avl | RFQ |
| AM9102BDM | Msis Semiconductor Inc | microcircuit memory | Avl | RFQ |
| AM9102ADM | Advanced Micro Devices Inc | microcircuit memory | Avl | RFQ |
| AM9102 BDM | Advanced Micro Devices Inc | microcircuit memory | Avl | RFQ |
| 2102AJ R | Rochester Electronics Llc | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 260.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 1 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM TOTAL SUPPLY |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MILSTD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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5905-00-001-2971 (5905000012971) |
5905-00-001-3031 (5905000013031) |
5905-00-001-3050 (5905000013050) |
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5905-00-001-3085 (5905000013085) |
5905-00-001-3197 (5905000013197) |
5905-00-001-3806 (5905000013806) |
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5905-00-001-3819 (5905000013819) |
5905-00-001-3821 (5905000013821) |
5905-00-001-3822 (5905000013822) |
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5905-00-001-3824 (5905000013824) |
5905-00-001-3825 (5905000013825) |
5905-00-001-3827 (5905000013827) |
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