NSN 5962-01-196-6113 (5962011966113) Listing

Alternative NSN: 5962-01-196-6113

FSG: 59 Electrical and Electronic Equipment Components

Federal Supply Class (FSC): 5962 Microcircuits Electronic

NIIN: 011966113

NCB Code: USA (01)

Manufacturers: Advanced Micro Devices Inc, Dla Land And Maritime, Fairchild Semiconductor Corporation, Intersil Corporation, Mmi Amd, Philips Semiconductors Inc

Browse NSN parts of NSN 5962-01-196-6113 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5962-01-196-6113 like 53S3281J 883B, 82008, 8200801JA, 8200801JB, 8200801JX described as Microcircuit Memory from industry leading manufactures such as Mmi Amd, Dla Land And Maritime, Philips Semiconductors Inc, Advanced Micro Devices Inc, Intersil Corporation. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.

Part Number's List for NSN 5962-01-196-6113, 5962011966113

Part No	Manufacturer	Item Name	QTY	RFQ
53S3281J 883B	Mmi Amd	microcircuit memory	Avl	RFQ
82008	Dla Land And Maritime	microcircuit memory	Avl	RFQ
8200801JA	Dla Land And Maritime	microcircuit memory	Avl	RFQ
8200801JB	Dla Land And Maritime	microcircuit memory	Avl	RFQ
8200801JX	Dla Land And Maritime	microcircuit memory	Avl	RFQ
82008A1JB	Dla Land And Maritime	microcircuit memory	Avl	RFQ
82008B1JB	Dla Land And Maritime	microcircuit memory	Avl	RFQ
82HS321A-BJA	Philips Semiconductors Inc	microcircuit memory	Avl	RFQ
AM27S43 BJA	Advanced Micro Devices Inc	microcircuit memory	Avl	RFQ
HM1-76321-8	Intersil Corporation	microcircuit memory	Avl	RFQ
R29671DM 883B	Fairchild Semiconductor Corporation	microcircuit memory	Avl	RFQ

Product Specification of NSN 5962011966113

MRC	Criteria	Characteristic
ADAQ	BODY LENGTH	1.290 INCHES MAXIMUM
ADAT	BODY WIDTH	0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
ADAU	BODY HEIGHT	0.210 INCHES MAXIMUM
AEHX	MAXIMUM POWER DISSIPATION RATING	1.04 WATTS
AFGA	OPERATING TEMP RANGE	-55.0/+125.0 DEG CELSIUS
AFJQ	STORAGE TEMP RANGE	-65.0/+150.0 DEG CELSIUS
CBBL	FEATURES PROVIDED	HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE
CQSJ	INCLOSURE MATERIAL	CERAMIC
CQSZ	INCLOSURE CONFIGURATION	DUAL-IN-LINE
CQWX	OUTPUT LOGIC FORM	BIPOLAR METAL-OXIDE SEMICONDUCTOR
CQZP	INPUT CIRCUIT PATTERN	14 INPUT
CTFT	CASE OUTLINE SOURCE AND DESIGNATOR	D-3 MIL-M-38510
CTQX	CURRENT RATING PER CHARACTERISTIC	100.00 MILLIAMPERES NOMINAL OUTPUT
CWSG	TERMINAL SURFACE TREATMENT	SOLDER
CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC	5.0 VOLTS MAXIMUM POWER SOURCE
CZEQ	TIME RATING PER CHACTERISTIC	45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZER	MEMORY DEVICE TYPE	ROM
CZZZ	MEMORY CAPACITY	UNKNOWN
TEST	TEST DATA DOCUMENT	14933-82008 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWIN
TTQY	TERMINAL TYPE AND QUANTITY	24 PRINTED CIRCUIT

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