NSN 5962-01-283-0730 (5962012830730) Listing

Alternative NSN: 5962-01-283-0730

FSG: 59 Electrical and Electronic Equipment Components

Federal Supply Class (FSC): 5962 Microcircuits Electronic

NCB Code: USA (01)

Manufacturers: Advanced Micro Devices Inc, Bae Systems Information And Electronic Systems Integration I, Dla Land And Maritime, Fujitsu Microelectronics Inc

Browse NSN parts of NSN 5962-01-283-0730 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5962-01-283-0730 like 201882-002, 5962-8200703BRA, 5962-8200703BRB, 5962-8200703BRX, 82007 described as Microcircuit Memory from industry leading manufactures such as Bae Systems Information And Electronic Systems Integration I, Dla Land And Maritime, Advanced Micro Devices Inc, Fujitsu Microelectronics Inc. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.

Part Number's List for NSN 5962-01-283-0730, 5962012830730

Part No	Manufacturer	Item Name	QTY	RFQ
201882-002	Bae Systems Information And Electronic Systems Integration I	microcircuit memory	Avl	RFQ
5962-8200703BRA	Dla Land And Maritime	microcircuit memory	Avl	RFQ
5962-8200703BRB	Dla Land And Maritime	microcircuit memory	Avl	RFQ
5962-8200703BRX	Dla Land And Maritime	microcircuit memory	Avl	RFQ
82007	Dla Land And Maritime	microcircuit memory	Avl	RFQ
8200703RA	Dla Land And Maritime	microcircuit memory	Avl	RFQ
8200703RB	Dla Land And Maritime	microcircuit memory	Avl	RFQ
8200703RX	Dla Land And Maritime	microcircuit memory	Avl	RFQ
AM2167-55 BRA	Advanced Micro Devices Inc	microcircuit memory	Avl	RFQ
MB81C67-45Z-W-SC	Fujitsu Microelectronics Inc	microcircuit memory	Avl	RFQ

Product Specification of NSN 5962012830730

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 060 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 2 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN17 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT

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