NSN 5962-01-309-3424 (5962013093424) Listing

Alternative NSN: 5962-01-309-3424

FSG: 59 Electrical and Electronic Equipment Components

Federal Supply Class (FSC): 5962 Microcircuits Electronic

NCB Code: USA (01)

Manufacturers: Advanced Micro Devices Inc, Bae Systems Information And Electronic Systems Integration I, Dla Land And Maritime, Fujitsu Microelectronics Inc, Integrated Device Technology Inc, Intel Corporation, Sgs Thomson Microelectronics Inc

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Part Number's List for NSN 5962-01-309-3424, 5962013093424

Part No	Manufacturer	Item Name	QTY	RFQ
201882-003	Bae Systems Information And Electronic Systems Integration I	microcircuit memory	Avl	RFQ
5962 8670513RA	Dla Land And Maritime	microcircuit memory	Avl	RFQ
5962 8670513RB	Dla Land And Maritime	microcircuit memory	Avl	RFQ
5962-86705	Dla Land And Maritime	microcircuit memory	Avl	RFQ
5962-8670513RX	Dla Land And Maritime	microcircuit memory	Avl	RFQ
AM2176-45BRA	Advanced Micro Devices Inc	microcircuit memory	Avl	RFQ
IDT6168SA45DB	Integrated Device Technology Inc	microcircuit memory	Avl	RFQ
IMS1423S 45M	Sgs Thomson Microelectronics Inc	microcircuit memory	Avl	RFQ
MB81C67-35Z-W SC	Fujitsu Microelectronics Inc	microcircuit memory	Avl	RFQ
MD51C68-45 B	Intel Corporation	microcircuit memory	Avl	RFQ

Product Specification of NSN 5962013093424

MRC	Criteria	Characteristic
MEMORY	CQZP	INPUT CIRCUIT PATTERN18 INPUT
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	ADAQ	BODY LENGTH1 060 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT
MEMORY	ADAU	BODY HEIGHT0 130 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND WENABLE
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC

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