| Alternative NSN: 5962-01-359-0333 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013590333 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Information And Electronic Systems Integration I, Cypress Semiconductor Inc, Performance Semiconductor Corp, Pyramid Semiconductor Corp |
Browse NSN parts of NSN 5962-01-359-0333 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5962-01-359-0333 like 330517-001, CY7C161A-25DBM, CY7C161A-25DBM, CY7C161A-25DBM, CY7C161A-45DMB described as Microcircuit Memory from industry leading manufactures such as Bae Systems Information And Electronic Systems Integration I, Cypress Semiconductor Inc, Pyramid Semiconductor Corp, Performance Semiconductor Corp. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 330517-001 | Bae Systems Information And Electronic Systems Integration I | microcircuit memory | Avl | RFQ |
| CY7C161A-25DBM | Cypress Semiconductor Inc | microcircuit memory | Avl | RFQ |
| CY7C161A-25DBM | Pyramid Semiconductor Corp | microcircuit memory | Avl | RFQ |
| CY7C161A-25DBM | Performance Semiconductor Corp | microcircuit memory | Avl | RFQ |
| CY7C161A-45DMB | Cypress Semiconductor Inc | microcircuit memory | Avl | RFQ |
| P4C1981-25CMB | Pyramid Semiconductor Corp | microcircuit memory | Avl | RFQ |
| P4C1981-25CMB M0296 | Pyramid Semiconductor Corp | microcircuit memory | Avl | RFQ |
| P4C1981-25DMB | Performance Semiconductor Corp | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND PROGRAMMED AND MONOLITHIC |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING385 0 MILLIWATTS |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN21 INPUT |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
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5905-00-001-2971 (5905000012971) |
5905-00-001-3031 (5905000013031) |
5905-00-001-3050 (5905000013050) |
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5905-00-001-3085 (5905000013085) |
5905-00-001-3197 (5905000013197) |
5905-00-001-3806 (5905000013806) |
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5905-00-001-3819 (5905000013819) |
5905-00-001-3821 (5905000013821) |
5905-00-001-3822 (5905000013822) |
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5905-00-001-3824 (5905000013824) |
5905-00-001-3825 (5905000013825) |
5905-00-001-3827 (5905000013827) |
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