| Alternative NSN: 5962-01-363-9446 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013639446 |
| NCB Code: USA (01) |
| Manufacturers: Intersil Corporation, Mmi Amd, Philips Semiconductors Inc, Raytheon Company, Raytheon Technical Services Company |
Browse NSN parts of NSN 5962-01-363-9446 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5962-01-363-9446 like 996378-318, 996378-318, HM1-7611-8, MMI-5301-1D 883B, S82S129F 883B described as Microcircuit Memory from industry leading manufactures such as Raytheon Technical Services Company, Raytheon Company, Intersil Corporation, Mmi Amd, Philips Semiconductors Inc. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 996378-318 | Raytheon Technical Services Company | microcircuit memory | Avl | RFQ |
| 996378-318 | Raytheon Company | microcircuit memory | Avl | RFQ |
| HM1-7611-8 | Intersil Corporation | microcircuit memory | Avl | RFQ |
| MMI-5301-1D 883B | Mmi Amd | microcircuit memory | Avl | RFQ |
| S82S129F 883B | Philips Semiconductors Inc | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | DISPLAY CONSO E/I FSCM 49956 |
| CBBL | FEATURES PROVIDED | PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,FUSED MSI MICROCONTROLLER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM INPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| TEST | TEST DATA DOCUMENT | 49956-996378-318 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 96906-MIL-STD-883/TX/ GOVERNMENT STANDARD |
| CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS NOMINAL ACCESS AND 60.00 NANOSECONDS MAXIMUM ACCESS |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
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5905-00-001-2971 (5905000012971) |
5905-00-001-3031 (5905000013031) |
5905-00-001-3050 (5905000013050) |
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5905-00-001-3085 (5905000013085) |
5905-00-001-3197 (5905000013197) |
5905-00-001-3806 (5905000013806) |
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5905-00-001-3819 (5905000013819) |
5905-00-001-3821 (5905000013821) |
5905-00-001-3822 (5905000013822) |
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5905-00-001-3824 (5905000013824) |
5905-00-001-3825 (5905000013825) |
5905-00-001-3827 (5905000013827) |
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