| Alternative NSN: 5962-01-408-2869 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 014082869 |
| NCB Code: USA (01) |
| Manufacturers: Hitachi Ltd, Nec Electronics Usa Inc, Samsung Semiconductor Inc |
Browse NSN parts of NSN 5962-01-408-2869 and get lowest price for your requested parts in 15 minutes. Just ordered part of NSN 5962-01-408-2869 like HM628128LP-7, K6T1008C2EDB7000, PD431000ACZ-70L, UPD431000ACZ-70L described as Microcircuit Memory from industry leading manufactures such as Hitachi Ltd, Samsung Semiconductor Inc, Nec Electronics Usa Inc. We are proud to offer an inventory of over 2 billion ready-to-ship parts, 24/7 availability, and key locations in the U.S./abroad. These attributes allow us to meet all aircraft on ground (AOG) requirements with ease.
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| HM628128LP-7 | Hitachi Ltd | microcircuit memory | Avl | RFQ |
| K6T1008C2EDB7000 | Samsung Semiconductor Inc | microcircuit memory | Avl | RFQ |
| PD431000ACZ-70L | Nec Electronics Usa Inc | microcircuit memory | Avl | RFQ |
| UPD431000ACZ-70L | Nec Electronics Usa Inc | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)" |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)" |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
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5905-00-001-2971 (5905000012971) |
5905-00-001-3031 (5905000013031) |
5905-00-001-3050 (5905000013050) |
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5905-00-001-3085 (5905000013085) |
5905-00-001-3197 (5905000013197) |
5905-00-001-3806 (5905000013806) |
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5905-00-001-3819 (5905000013819) |
5905-00-001-3821 (5905000013821) |
5905-00-001-3822 (5905000013822) |
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5905-00-001-3824 (5905000013824) |
5905-00-001-3825 (5905000013825) |
5905-00-001-3827 (5905000013827) |
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