| Part Number: 198030P2 | Manufacturer: Bae Systems Information And Electronic Systems Integration Inc |
| NSN : 5961-00-448-2635 (5961004482635) | Item Name : semiconductor device diode |
| CAGE Code: 94117 | FSC : 5961 Semiconductor Devices and Associated Hardware |
| NIIN : 00-448-2635 (004482635) | FSG : 59 Electrical and Electronic Equipment Components |
| Country: USA | NCB Code: 00 |
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-448-2635 Item Description: Semiconductor Device Diode | 5961 | 004482635 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | U | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 198030p2 | 2 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| DIODE | ABBH | INCLOSURE MATERIALGLASS |
| DIODE | ABHP | OVERALL LENGTH0 150 INCHES MINIMUM AND 0 170 INCHES MAXIMUM |
| DIODE | ABJT | TERMINAL LENGTH1 000 INCHES MINIMUM |
| DIODE | ADAV | OVERALL DIAMETER0 068 INCHES MINIMUM AND 0 076 INCHES MAXIMUM |
| DIODE | AXGY | MOUNTING METHODTERMINAL |
| DIODE | CBBL | FEATURES PROVIDEDBURN IN |
| DIODE | CTMZ | SEMICONDUCTOR MATERIALSILICON |
| DIODE | CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50 0 MINIMUM BREAKDOWN VOLTAGE INSTANTANEOUS |
| DIODE | CTQX | CURRENT RATING PER CHARACTERISTIC1 00 MILLIAMPERES MINIMUM FORWARD CURRENT DC |
| DIODE | CTRD | POWER RATING PER CHARACTERISTIC125 0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| DIODE | CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125 0 DEG CELSIUS JUNCTION |
| DIODE | TTQY | TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD |
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