| Part Number: PAL-025 | Manufacturer: Bae Systems |
| NSN : 5962-01-331-7106 (5962013317106) | Item Name : microcircuit memory |
| CAGE Code: K0978 | FSC : 5962 Microcircuits Electronic |
| Alternate P/N : PAL025 | INC Code: 41015 |
| NIIN : 01-331-7106 (013317106) | FSG : 59 Electrical and Electronic Equipment Components |
| Country: USA | NCB Code: 01 |
Would you like to obtain a quick quote for Bae Systems(Cage Code K0978) Part Number PAL-025Microcircuit Memorywith NSN 5962013317106? it's just a few steps away! Simply complete the form in its entirety, and we will promptly reply with a quote within 15 minutes. This is an excellent opportunity to get the quick quote for PAL-025, so take advantage of it right away.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-331-7106 Item Description: Microcircuit Memory | 5962 | 013317106 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Pal-025 | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | ADAQ | BODY LENGTH1 060 INCHES MAXIMUM |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE |
| MEMORY | ABKW | OVERALL HEIGHT0 400 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 2 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDBIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND BIDIRECTIONAL |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMBIPOLAR METAL-OXIDE SEMICONDUCTOR |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC12 00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
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