| Part Number: CY6116-55DMB | Manufacturer: Cypress Semiconductor Inc |
| NSN : 5962-01-332-0711 (5962013320711) | Item Name : microcircuit memory |
| CAGE Code: 65786 | FSC : 5962 Microcircuits Electronic |
| Alternate P/N : CY611655DMB | INC Code: 41015 |
| NIIN : 01-332-0711 (013320711) | FSG : 59 Electrical and Electronic Equipment Components |
| Country: USA | NCB Code: 01 |
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-332-0711 Item Description: Microcircuit Memory | 5962 | 013320711 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Cy6116-55dmb | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.225 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
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