| Part Number: 1DT203L20TDB | Manufacturer: Integrated Device Technology Inc |
| NSN : 5962-01-491-2679 (5962014912679) | Item Name : microcircuit memory |
| CAGE Code: 61772 | FSC : 5962 Microcircuits Electronic |
| NIIN : 01-491-2679 (014912679) | FSG : 59 Electrical and Electronic Equipment Components |
| Country: USA | NCB Code: 01 |
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-491-2679 Item Description: Microcircuit Memory | 5962 | 014912679 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1dt203l20tdb | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 155.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | RADAR THREAT EMITTER AN/MST-T1; M3P REU-L |
| CBBL | FEATURES PROVIDED | HIGH SPEED AND LOW POWER AND ASYNCHRONOUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS ASYNCHRONOUS FIFO |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS NOMINAL ACCESS |
| CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT |
| FEAT | SPECIAL FEATURES | 2,048 X 9-BIT; THIN CERAMIC DIP |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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