| Part Number: C2147-3 | Manufacturer: Intel Corporation |
| NSN : 5962-01-101-7964 (5962011017964) | Item Name : microcircuit memory |
| CAGE Code: 34649 | FSC : 5962 Microcircuits Electronic |
| Alternate P/N : C21473 |
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-101-7964 Item Description: Microcircuit Memory | 5962 | 011017964 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | G | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| C2147-3 | 3 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 880 INCHES MINIMUM AND 0 920 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 270 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 080 INCHES MINIMUM AND 0 130 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND WENABLE AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN15 INPUT |
| MEMORY | CRHL | BIT QUANTITY4096 |
| MEMORY | CSWJ | WORD QUANTITY4096 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTGOLD |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC65 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 65 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | PMLC | PRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACE GOLD |
| MEMORY | PRMT | PRECIOUS MATERIALGOLD |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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