| Part Number: D2117-3 | Manufacturer: Intel Corporation |
| NSN : 5962-01-155-1465 (5962011551465) | Item Name : microcircuitmemory |
| CAGE Code: 34649 | FSC : 5962 Microcircuits Electronic |
| Alternate P/N : D21173 | INC Code: 41015 |
| NIIN : 01-155-1465 (011551465) | FSG : 59 Electrical and Electronic Equipment Components |
| Country: USA | NCB Code: 01 |
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-155-1465 Item Description: Microcircuitmemory | 5962 | 011551465 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| D2117-3 | 3 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 750 INCHES MINIMUM AND 0 790 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 265 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 165 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1000 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-10 080 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDDYNAMIC AND HERMETICALLY SEALED AND HIGH PERFORMANCE AND HIGH RELIABILITY AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN8 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY16384 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC20 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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