| Part Number: BD679 | Manufacturer: Philips Semiconductors Inc |
| NSN : 5961-01-305-8685 (5961013058685) | Item Name : transistor |
| CAGE Code: 18324 | FSC : 5961 Semiconductor Devices and Associated Hardware |
| NIIN : 01-305-8685 (013058685) | FSG : 59 Electrical and Electronic Equipment Components |
| Country: USA | NCB Code: 01 |
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-305-8685 Item Description: Transistor | 5961 | 013058685 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Bd679 | 5 | 9 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 11.1 MILLIMETERS MAXIMUM |
| ABJT | TERMINAL LENGTH | 15.3 MILLIMETERS MINIMUM |
| ABKW | OVERALL HEIGHT | 2.8 MILLIMETERS MAXIMUM |
| ABMK | OVERALL WIDTH | 7.8 MILLIMETERS MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
| AXGY | MOUNTING METHOD | TERMINAL AND UNTHREADED HOLE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 40.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-126 |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| CTRK | TRANSFER RATIO | 500.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
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