| Part Number: V510-00018-1 | Manufacturer: Raytheon Company |
| NSN : 5962-01-241-3168 (5962012413168) | Item Name : microcircuit memory |
| CAGE Code: 82577 | FSC : 5962 Microcircuits Electronic |
| Alternate P/N : V510000181 |
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-241-3168 Item Description: MICROCIRCUIT,MEMORY | 5962 | 012413168 | N | |||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| V510-00018-1 | 3 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 870 INCHES MINIMUM AND 0 920 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 280 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 160 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDWENABLE AND HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
| MEMORY | CRHL | BIT QUANTITY4096 |
| MEMORY | CSWJ | WORD QUANTITY1024 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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