| Part Number: PR979738-113 | Manufacturer: Raytheon Company |
| NSN : 5962-01-373-9119 (5962013739119) | Item Name : microcircuit memory |
| CAGE Code: 49956 | FSC : 5962 Microcircuits Electronic |
| Alternate P/N : PR979738113 |
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-373-9119 Item Description: Microcircuit Memory | 5962 | 013739119 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Pr979738-113 | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | DISPLAY CONSO E/I FSCM 49956" |
| CBBL | FEATURES PROVIDED | BIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND HIGH RELIABILITY AND PROGRAMMED" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM OUTPUT" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 1024 BIT BIPOLAR(256X4) ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED" |
| CZER | MEMORY DEVICE TYPE | EEPROM" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT" |
| ZZZP | PURCHASE DESCRIPTION IDENTIFICATION | 49956-979738-113" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | DISPLAY CONSO E/I FSCM 49956" |
| CBBL | FEATURES PROVIDED | BIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND HIGH RELIABILITY AND PROGRAMMED" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM OUTPUT" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 1024 BIT BIPOLAR(256X4) ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED" |
| CZER | MEMORY DEVICE TYPE | EEPROM" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT" |
| ZZZP | PURCHASE DESCRIPTION IDENTIFICATION | 49956-979738-113" |
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